TitleSapphire Photocurrent Sources and Their Impact on RAM Upset
Publication TypeJournal Article
Year of Publication1986
AuthorsBrucker, GJ, Herbert, J, Stewart, R, Plus, D
JournalIEEE Transactions on Nuclear Science
Volume33
Pagination1377 - 1380
Date Published12/1986
ISSN0018-9499
KeywordsCMOS; Electric Current; Electronics and Electrical Engineering; Logic Circuits; parker solar probe; Photoconductivity; Radiation Damage; Random Access Memory; Sapphire; Solar Probe Plus; Sos (Semiconductors)
Abstract

This paper reports on the transient photocurrent measurements made with test structures fabricated on sapphire substrates, and the computer simulation model which was developed to use the test results. Predictions of logic upset for a 4 K RAM CMOS/SOS compared with measured upset rates showed agreement within a factor of 2. The test structure results indicate that the sapphire photoconductance is 6.3 x 10 to the -19th mhos/(rads/s)-micron. The use of this value in the present simulation model will increase the predicted upset rate, and thus, increase the disagreement by more than a factor of two.

URLhttp://ieeexplore.ieee.org/document/4334608/http://xplorestaging.ieee.org/ielx5/23/4334557/04334608.pdf?arnumber=4334608
DOI10.1109/TNS.1986.4334608


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